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1 self-aligned regions
самосуміщені областіEnglish-Ukrainian dictionary of microelectronics > self-aligned regions
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2 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region
См. также в других словарях:
Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… … Wikipedia
self-aligned integrated circuit — integrinis grandynas su susitapatinančiomis sritimis statusas T sritis radioelektronika atitikmenys: angl. self aligned integrated circuit vok. selbstjustierter integrierter Schaltkreis, m rus. интегральная схема с самосовмещёнными областями, f… … Radioelektronikos terminų žodynas
self-aligned semiconductor device — puslaidininkinis įtaisas su susitapatinančiomis sritimis statusas T sritis radioelektronika atitikmenys: angl. self aligned semiconductor device vok. selbstjustierter Halbleiterbaustein, m rus. полупроводниковый прибор с самосовмещёнными… … Radioelektronikos terminų žodynas
self-aligned charge-coupled device — krūvio sąsajos įtaisas su susitapatinančiomis sritimis statusas T sritis radioelektronika atitikmenys: angl. self aligned charge coupled device vok. selbstjustierter ladungsgekoppelter Baustein, m rus. прибор с зарядовой связью с самосовмещёнными … Radioelektronikos terminų žodynas
metal self-aligned MOS process — susitapatinančiosios metalizacijos MOP darinių technologija statusas T sritis radioelektronika atitikmenys: angl. metal self aligned MOS process vok. selbstjustierende Metallisierungsprozeß MOS Technik, f rus. технология МОП структур с… … Radioelektronikos terminų žodynas
circuit intégré à régions auto-alignées — integrinis grandynas su susitapatinančiomis sritimis statusas T sritis radioelektronika atitikmenys: angl. self aligned integrated circuit vok. selbstjustierter integrierter Schaltkreis, m rus. интегральная схема с самосовмещёнными областями, f… … Radioelektronikos terminų žodynas
dispositif semi-conducteur à régions auto-alignées — puslaidininkinis įtaisas su susitapatinančiomis sritimis statusas T sritis radioelektronika atitikmenys: angl. self aligned semiconductor device vok. selbstjustierter Halbleiterbaustein, m rus. полупроводниковый прибор с самосовмещёнными… … Radioelektronikos terminų žodynas
dispositif à couplage de charge à régions auto-alignées — krūvio sąsajos įtaisas su susitapatinančiomis sritimis statusas T sritis radioelektronika atitikmenys: angl. self aligned charge coupled device vok. selbstjustierter ladungsgekoppelter Baustein, m rus. прибор с зарядовой связью с самосовмещёнными … Radioelektronikos terminų žodynas
technologie MOS à régions métalliques auto-alignées — susitapatinančiosios metalizacijos MOP darinių technologija statusas T sritis radioelektronika atitikmenys: angl. metal self aligned MOS process vok. selbstjustierende Metallisierungsprozeß MOS Technik, f rus. технология МОП структур с… … Radioelektronikos terminų žodynas
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